photodiode 100 mm 2 SXUV100 features ? single active area ? detection to 1 nm ? stable response after exposure to euv/uv conditions ? protective cover plate electro-optical characteristics at 25c parameters test conditions min typ max units active area responsivity, r shunt resistance, rsh reverse breakdown voltage, v r capacitance, c response time, tr thermal parameters storage and operating temperature range ambient nitrogen or vacuum maximum junction temperature lead soldering temperature 1 -10 to 40c -20c to 80c 70c 260c 1 0.08" from case for 10 seconds dimensions are in inch [metric] units. 10 mm x 10 mm (see graph on next page) @ 10 mv i r = 1 a v r = 0v rl = 50 , v r = 15v 10 100 10 6 250 mm 2 mohms volts nf nsec revision february 26, 2013 750 mitchell road, newbury park, california 91320 phone: (805) 499-0335, fax: (805) 499-8108 email: sales@optodiode.com, website: www.optodiode.com
photodiode 100 mm 2 SXUV100 0.35 responsivity (a/w) 0.30 0.25 0.20 0.15 0.10 0.05 0.0 1 10 100 wavelength (nm) 1000 photon responsivity revision february 26, 2013 750 mitchell road, newbury park, california 91320 phone: (805) 499-0335, fax: (805) 499-8108 email: sales@optodiode.com, website: www.optodiode.com
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